SELF-ALIGNED ENHANCEMENT-MODE AND DEPLETION-MODE GAAS FIELD-EFFECT TRANSISTORS EMPLOYING THE SIGMA-DOPING TECHNIQUE

被引：35

作者：

SCHUBERT, EF

CUNNINGHAM, JE

TSANG, WT

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 25期

关键词：

D O I：

10.1063/1.97229

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1729 / 1731

页数：3

共 25 条

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