DRY ETCHING FOR VLSI - A REVIEW

[1] DRY-ETCHED INORGANIC RESIST [J]. APPLIED PHYSICS LETTERS, 1978, 33 (10) : 892 - 895

[2] Chapman B., 1980, SEMICONDUCTOR IN NOV, P139

[3] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3189 - 3196

[4] INTERFACE EFFECTS AND HIGH CONDUCTIVITY IN OXIDES GROWN FROM POLYCRYSTALLINE SILICON [J]. APPLIED PHYSICS LETTERS, 1975, 27 (09) : 505 - 507

[5] RADIATION-DAMAGE IN SILICON DIOXIDE FILMS EXPOSED TO REACTIVE ION ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) : 4015 - 4021

[6] DIMARIA DJ, 1980, EL SOC EXT ABSTR, P1381

[7] ETCHING UNIFORMITIES OF SILICON IN CF4 + 4-PERCENT O2 PLASMA [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (12) : 2235 - 2239

[8] ENDO N, 1980, IEEE T ELECTRON DEV, V27, P1346, DOI 10.1109/T-ED.1980.20038

[9] Ephrath L. M., 1980, International Electron Devices Meeting. Technical Digest, P402

[10] SELECTIVE ETCHING OF SILICON DIOXIDE USING REACTIVE ION ETCHING WITH CF4-H2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : 1419 - 1421

[1] DRY-ETCHED INORGANIC RESIST [J]. APPLIED PHYSICS LETTERS, 1978, 33 (10) : 892 - 895

[2] Chapman B., 1980, SEMICONDUCTOR IN NOV, P139

[3] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3189 - 3196

[4] INTERFACE EFFECTS AND HIGH CONDUCTIVITY IN OXIDES GROWN FROM POLYCRYSTALLINE SILICON [J]. APPLIED PHYSICS LETTERS, 1975, 27 (09) : 505 - 507

[5] RADIATION-DAMAGE IN SILICON DIOXIDE FILMS EXPOSED TO REACTIVE ION ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) : 4015 - 4021

[6] DIMARIA DJ, 1980, EL SOC EXT ABSTR, P1381

[7] ETCHING UNIFORMITIES OF SILICON IN CF4 + 4-PERCENT O2 PLASMA [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (12) : 2235 - 2239

[8] ENDO N, 1980, IEEE T ELECTRON DEV, V27, P1346, DOI 10.1109/T-ED.1980.20038

[9] Ephrath L. M., 1980, International Electron Devices Meeting. Technical Digest, P402

[10] SELECTIVE ETCHING OF SILICON DIOXIDE USING REACTIVE ION ETCHING WITH CF4-H2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : 1419 - 1421