NEW ORIGIN OF DARK-LINE DEFECTS IN PLANAR-STRIPE DH LASERS

被引：17

作者：

SAITO, H ^{[1
]}

KAWAKAMI, T ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMM LAB,TOKYO,JAPAN

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1977年 / 13卷 / 08期

关键词：

D O I：

10.1109/JQE.1977.1069399

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：564 / 567

页数：4

共 6 条

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DELOACH, BC ;

HAKKI, BW ;

HARTMAN, RL ;

DASARO, LA .

PROCEEDINGS OF THE IEEE, 1973, 61 (07) :1042-1044

[2] DEFECT STRUCTURE OF DEGRADED HETEROJUNCTION GAALAS-GAAS LASERS [J].

HUTCHINSON, PW ;

DOBSON, PS ;

OHARA, S ;

NEWMAN, DH .

APPLIED PHYSICS LETTERS, 1975, 26 (05) :250-252

[3] DEGRADATION SOURCES IN GAAS-ALGAAS DOUBLE-HETEROSTRUCTURE LASERS [J].

ITO, R ;

NAKASHIMA, H ;

KISHINO, S ;

NAKADA, O .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) :551-556

[4] INFLUENCE OF DEVICE FABRICATION PARAMETERS ON GRADUAL DEGRADATION OF (AIGA)AS CW LASER-DIODES [J].

LADANY, I ;

KRESSEL, H .

APPLIED PHYSICS LETTERS, 1974, 25 (12) :708-710

[5] RAPID DEGRADATION PHENOMENON IN HETEROJUNCTION GAALAS-GAAS LASERS [J].

PETROFF, P ;

HARTMAN, RL .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (09) :3899-3903

[6] DEGRADATION IN INJECTION LASERS [J].

WOOLHOUSE, GR .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) :556-561

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