GEOMETRICAL AND LIGHT-INDUCED EFFECTS ON BACK-GATING IN ION-IMPLANTED GAAS-MESFETS

被引：24

作者：

SUBRAMANIAN, S

BHATTACHARYA, PK

STAKER, KJ

GHOSH, CL

BADAWI, MH

机构：

[1] STAND TELECOMMUN LABS LTD,HARLOW CM17 9NA,ESSEX,ENGLAND

[2] ITT,GALLIUM ARSENIDE TECHNOL CTR,ROANOKE,VA 24019

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 01期

关键词：

D O I：

10.1109/T-ED.1985.21904

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：28 / 33

页数：6

共 10 条

[1]

DAVANZO D, 1982, IEEE T ELECTRON DEV, V29, P1051

[2] STABILITY OF PERFORMANCE AND INTERFACIAL PROBLEMS IN GAAS-MESFETS [J].

ITOH, T ;

YANAI, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1037-1045

[3]

KOCOT C, 1982, IEEE T ELECTRON DEV, V29, P1059

[4]

Lampert M.A., 1970, PHYS B, DOI DOI 10.1088/0031-9112/21/12/031/PDF

[5]

Lee C. P., 1982, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. Technical Digest 1982, P169

[6]

LEE CP, 1982, IEEE ELECTRON DEVICE, V3, P97

[7]

Makram-Ebeid S., 1983, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. Technical Digest 1983, P142

[8]

MARTIN GM, 1981, P SEMIINSULATING 3 5, P13

[9]

Paulson W. M., 1982, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. Technical Digest 1982, P166

[10] CHARACTERIZATION OF ELECTRON TRAPS IN ION-IMPLANTED GAAS-MESFETS ON UNDOPED AND CR-DOPED LEC SEMI-INSULATING SUBSTRATES [J].

SRIRAM, S ;

DAS, MB .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (06) :586-592

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