DIMES-01, A BASE-LINE BIFET PROCESS FOR SMART SENSOR EXPERIMENTATION

被引:27
作者
NANVER, LK
GOUDENA, EJG
VANZEIJL, HW
机构
[1] Delft Institute of Microelectronics and Submicrontechnology, DIMES IC Process Research Sector, Delft University of Technology, Delft
关键词
D O I
10.1016/0924-4247(93)85008-4
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The DIMES-01 BIFET baseline process is presented. The process and devices are described in relationship to their application in integrated silicon sensor research and development. In particular, the possibilities of introducing special sensor process modules and steps are treated.
引用
收藏
页码:139 / 147
页数:9
相关论文
共 22 条
[1]  
HAARTSEN JC, 1990, SENSOR ACTUAT A-PHYS, V21, P675
[2]  
HAARTSEN JC, 1988 P IEEE ULTR S C, P159
[3]   SURFACE MICROMACHINING FOR MICROSENSORS AND MICROACTUATORS [J].
HOWE, RT .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06) :1809-1813
[4]  
MIDDELHOEK S, 1989, SILICON SENSORS
[5]  
MORITA M, 1990, 22ND 1990 INT C SOL, P1063
[6]  
MUNTER PJA, 1990, SENSOR ACTUAT A-PHYS, V21, P743
[7]   DESIGN CONSIDERATIONS FOR INTEGRATED HIGH-FREQUENCY P-CHANNEL JFETS [J].
NANVER, LK ;
GOUDENA, EJG .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (11) :1924-1934
[8]   IV CHARACTERISTICS OF INTEGRATED N+PN- REACHTHROUGH DIODES [J].
NANVER, LK ;
GOUDENA, EJG .
SOLID-STATE ELECTRONICS, 1989, 32 (08) :637-645
[9]  
NANVER LK, 1982, MICROELECTRON ENG, V19, P539
[10]  
NANVER LK, 1987, THESIS DELFT U TECHN