IV CHARACTERISTICS OF INTEGRATED N+PN- REACHTHROUGH DIODES

被引：2

作者：

NANVER, LK ^{[1
]}

GOUDENA, EJG ^{[1
]}

机构：

[1] DELFT UNIV TECHNOL,DEPT ELECT ENGN,2628 CD DELFT,NETHERLANDS

来源：

SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 08期

关键词：

D O I：

10.1016/0038-1101(89)90142-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：637 / 645

页数：9

共 9 条

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