DESIGN CONSIDERATIONS FOR INTEGRATED HIGH-FREQUENCY P-CHANNEL JFETS

被引:5
作者
NANVER, LK
GOUDENA, EJG
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关键词
D O I
10.1109/16.7406
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:1924 / 1934
页数:11
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共 12 条
[1]  
BOCKEMUEL R, 1963, IEEE T ELECTRON DEV, P31
[2]   CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD [J].
CAUGHEY, DM ;
THOMAS, RE .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12) :2192-+
[3]  
DAS C, 1984, THESIS KATHOLIEKE U
[5]  
Gray P.R., 1984, ANAL DESIGN ANALOG I
[6]   A HIGH-FREQUENCY BIPOLAR JFET I-2L PROCESS [J].
LUI, SK ;
MEYER, RG .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (08) :1319-1323
[7]   JFETS FABRICATED IN A STANDARD IC PROCESS FOR BIPOLAR-TRANSISTORS [J].
MEIJER, GCM ;
VERWEIJEN, FLJ .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (04) :530-532
[8]  
NAGEL LW, 1975, ERLM520 U CAL EL RES
[9]   CHARACTERISTICS OF SEPARATED-GATE JFETS [J].
NANVER, LK ;
GOUDENA, EJG .
ELECTRONICS LETTERS, 1986, 22 (23) :1244-1246
[10]  
NANVER LK, 1987, THESIS DELFT U TECHN