AN EXPERIMENTALLY VERIFIED IGBT MODEL IMPLEMENTED IN THE SABER CIRCUIT SIMULATOR

被引:183
作者
HEFNER, AR [1 ]
DIEBOLT, DM [1 ]
机构
[1] ANAL INC,BEAVERTON,OR 97075
关键词
Insulated gate bipolar transistors - Saber circuit simulator;
D O I
10.1109/63.321038
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A physics-based IGBT model is implemented into the general purpose circuit simulator Saber(TM). The IGBT model includes all of the physical effects that have been shown to be important for describing IGBT's, and the model is valid for general external circuit conditions. The Saber IGBT model is evaluated for the range of static and dynamic conditions in which the device is intended to be operated, and the simulations compare well with experimental results for all of the conditions studied.
引用
收藏
页码:532 / 542
页数:11
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