ANNEALING BEHAVIOR OF TRAP-CENTERS IN SILICON CONTAINING A-SWIRL DEFECTS

被引：11

作者：

LEFEVRE, H

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1982年 / 29卷 / 02期

关键词：

D O I：

10.1007/BF00632436

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：105 / 111

页数：7

共 45 条

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FOLL, H ;

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[10] NATURE OF SWIRLS AND ITS SIGNIFICANCE FOR UNDERSTANDING POINT-DEFECTS IN SILICON [J].

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