TARGET TEMPERATURE-DEPENDENCE OF SHEET RESISTIVITY AND STRUCTURE OF AR-IMPLANTED DIAMONDS

被引：34

作者：

SATO, S ^{[1
]}

IWAKI, M ^{[1
]}

机构：

[1] INST PHYS & CHEM RES,WAKO,SAITAMA 35101,JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1988年 / 32卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(88)90198-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：145 / 149

页数：5

共 6 条

[1]

COLLINS AT, 1979, PROPERTIES DIAMOND, P100

[2] RAMAN-SCATTERING FROM ION-IMPLANTED GRAPHITE [J].

ELMAN, BS ;

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MABY, EW ;

MAZUREK, H .

PHYSICAL REVIEW B, 1981, 24 (02) :1027-1034

[3] ELECTRICAL-CONDUCTIVITY OF NITROGEN AND ARGON IMPLANTED DIAMOND [J].

IWAKI, M ;

SATO, S ;

TAKAHASHI, K ;

SAKAIRI, H .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY) :1129-1133

[4] A PERCOLATION THEORY APPROACH TO THE IMPLANTATION INDUCED DIAMOND TO AMORPHOUS-CARBON TRANSITION [J].

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SHAPIRO, B ;

TALMI, A .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 52 (3-4) :153-168

[5] ELECTRICAL-PROPERTIES OF TI AND CR ION-IMPLANTED DIAMONDS DEPENDENT ON TARGET TEMPERATURE [J].

SATO, S ;

IWAKI, M ;

SAKAIRI, H .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 :822-825

[6]

VAVILOV VS, 1979, SOV PHYS SEMICOND+, V13, P635

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