RESIDUAL-STRESS EVOLUTION IN TUNGSTEN THIN-FILMS UNDER IRRADIATION

被引：8

作者：

DURAND, N

BADAWI, KF

GOUDEAU, P

NAUDON, A

机构：

来源：

JOURNAL DE PHYSIQUE III | 1994年 / 4卷 / 01期

关键词：

D O I：

10.1051/jp3:1994110

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The influence of the irradiation dose upon the residual stresses in 1 000 angstrom tungsten thin films has been studied by two different techniques. Results show a relaxation of the strong initial compressive stresses (sigma = - 4.5 GPa) in virgin samples when the irradiation dose increases. The existence of a relaxation threshold is also clearly evidenced, it indicates a strong correlation between the thin film microstructure (point defects, grain size) and the relaxation phenomenon, and consequently, the residual stresses.

引用

页码：25 / 34

页数：10

共 14 条

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