NONDESTRUCTIVE DEPTH PROFILING OF CARRIER LIFETIMES IN FULL SILICON-WAFERS

被引：15

作者：

GUIDOTTI, D

BATCHELDER, JS

VANVECHTEN, JA

FINKEL, A

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 01期

关键词：

D O I：

10.1063/1.96764

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：68 / 70

页数：3

共 23 条

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