CHARACTERIZATION OF THERMALLY-INDUCED DEFECTS IN CZ-SI BY ROOM-TEMPERATURE PHOTO-LUMINESCENCE

被引：6

作者：

KATSURA, J

NAKAYAMA, H

NISHINO, T

HAMAKAWA, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1982年 / 21卷 / 05期

关键词：

D O I：

10.1143/JJAP.21.712

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：712 / 715

页数：4

共 14 条

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[2]

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[6] HALL-EFFECT AND PHOTO-LUMINESCENCE MEASUREMENTS OF OXYGEN-RELATED DONORS IN CZ-SI CRYSTALS [J].

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HAMAKAWA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (09) :L547-L550

[7] A NEW PHOTO-LUMINESCENCE METHOD OF CHARACTERIZING THE IN-DEPTH PROFILE OF THERMALLY INDUCED DEFECTS IN CZ-SI [J].

NAKAYAMA, H ;

KATSURA, J ;

NISHINO, T ;

HAMAKAWA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1982, 21 (01) :127-134

[8] LUMINESCENCE OF THERMALLY INDUCED DEFECTS IN SI CRYSTALS [J].

NAKAYAMA, H ;

NISHINO, T ;

HAMAKAWA, Y .

APPLIED PHYSICS LETTERS, 1981, 38 (08) :623-625

[9] THERMALLY INDUCED LUMINESCENT CENTERS IN CZOCHRALSKI-GROWN SILICON-CRYSTALS [J].

NAKAYAMA, H ;

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[10]

NAKAYAMA H, 1981, 13TH P C SOL STAT DE

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