PLASMA ANODIZATION OF EVAPORATED AL-INP SYSTEMS

被引：6

作者：

HIRAYAMA, Y

PARK, HM

KOSHIGA, F

SUGANO, T

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1982年 / 11卷 / 06期

关键词：

D O I：

10.1007/BF02658913

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1011 / 1022

页数：12

共 24 条

[1] OPTICAL-PROPERTIES OF IN1-XGAXP1-YASY, INP, GAAS, AND GAP DETERMINED BY ELLIPSOMETRY [J].

BURKHARD, H ;

DINGES, HW ;

KUPHAL, E .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) :655-662

[2]

FRITZSCHE D, 1980, I PHYS C SER, V50, P258

[3] CAPACITANCE-VOLTAGE CHARACTERISTICS OF AL-AL2O3-P-GAAS METAL-OXIDE-SEMICONDUCTOR DIODES [J].

HAYASHI, H ;

KIKUCHI, K ;

YAMAGUCHI, T .

APPLIED PHYSICS LETTERS, 1980, 37 (04) :404-406

[4] N-CHANNEL MISFETS ON SEMI-INSULATING INP FOR LOGIC APPLICATIONS [J].

HENRY, L ;

LECROSNIER, D ;

LHARIDON, H ;

PAUGAM, J ;

PELOUS, G ;

RICHOU, F ;

SALVI, M .

ELECTRONICS LETTERS, 1982, 18 (02) :102-103

[5] CAPACITANCE-VOLTAGE CHARACTERISTICS OF AL-PLASMA ANODIC AL2O3-GAAS DIODES [J].

HIRAYAMA, Y ;

KOSHIGA, F ;

SUGANO, T .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) :4697-4699

[6] ENHANCEMENT TYPE INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH PLASMA ANODIC ALUMINUM-OXIDE AS THE GATE INSULATOR [J].

HIRAYAMA, Y ;

PARK, HM ;

KOSHIGA, F ;

SUGANO, T .

APPLIED PHYSICS LETTERS, 1982, 40 (08) :712-713

[7]

HIRAYAMA Y, 1982, I PHYS C SER, V63, P431

[8]

HO VQ, 1981, IEEE T ELECTRON DEV, V28, P1060, DOI 10.1109/T-ED.1981.20485

[9] PLASMA-GROWN OXIDE ON INP [J].

KANAZAWA, K ;

MATSUNAMI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (03) :L211-L213

[10] INP-AL2O3 N-CHANNEL INVERSION-MODE MOSFETS USING SULFUR-DIFFUSED SOURCE AND DRAIN [J].

KAWAKAMI, T ;

OKAMURA, M .

ELECTRONICS LETTERS, 1979, 15 (16) :502-504

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