MICROSCOPY OF INTERNAL CRYSTAL IMPERFECTIONS IN SI P-N JUNCTION DIODES BY USE OF ELECTRON BEAMS

被引：48

作者：

LANDER, JJ

SCHREIBER, H

BUCK, TM

MATHEWS, JR

机构：

来源：

APPLIED PHYSICS LETTERS | 1963年 / 3卷 / 11期

关键词：

D O I：

10.1063/1.1753850

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：206 / 207

页数：2

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[5]

OATLEY CW, 1957, J ELCTRON CONTROL 2, V6, P568

[6] X-RAY OBSERVATIONS OF DIFFUSION-INDUCED DISLOCATIONS IN SILICON [J].

SCHWUTTKE, GH ;

QUEISSER, HJ .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (04) :1540-&

[7] THE SCANNING ELECTRON MICROSCOPE AND ITS FIELDS OF APPLICATION [J].

SMITH, KCA ;

OATLEY, CW .

BRITISH JOURNAL OF APPLIED PHYSICS, 1955, 6 (11) :391-399

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