ION-IMPLANTATION ELECTRON FLOODING REQUIREMENTS FROM A USERS PERSPECTIVE

被引：12

作者：

BAKEMAN, PE

PUTTLITZ, AF

机构：

来源：

关键词：

D O I：

10.1016/0168-583X(85)90664-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：399 / 404

页数：6

共 7 条

[1]

KIRSTEIN PT, 1976, SPACECHARGE FLOW, P137

[2] WAFER CHARGING AND BEAM INTERACTIONS IN ION-IMPLANTATION [J].

MACK, ME ;

RYDING, G ;

DOUGLASHAMILTON, DH ;

STEEPLES, K ;

FARLEY, M ;

GILLIS, V ;

WHITE, N ;

WITTKOWER, A ;

LAMBRACHT, R .

[3] HIGH-CURRENT DOSIMETRY TECHNIQUES [J].

MCKENNA, CM .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1979, 44 (1-4) :93-110

[4]

MCKENNA CM, 1980, IBM TECH DISCL B, P1403

[5] EFFECTS OF THIN CONDUCTIVE FILM MASK ON ION-IMPLANTATION [J].

NAKATSUKA, M ;

TANAKA, K ;

KIKKAWA, T .

[6]

OSBURN CM, 1982, J EL SOC EXT ABSTR, V82, P278

[7]

WU CP, 1983, RCA REV, V44, P48