ANNEALING OF IRRADIATED SILICON CONTAINING PHOSPHORUS ATOMS

[1] ANNEALING OF E CENTER IN IRRADIATED SILICON [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (03) : 252 - &

[2] HIRATA M, 1966, P INT S LATTICE DEFE

[3] HIRATA M, TO BE PUBLISHED

[4] SAITO H, 1963, JPN J APPL PHYS, V2, P678

[5] SPIN RESONANCE IN ELECTRON IRRADIATED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1198 - 1203

[6] DEFECTS IN IRRADIATED SILICON - ELECTRON PARAMAGNETIC RESONANCE + ELECTRON-NUCLEAR DOUBLE RESONANCE OF SI-E CENTER [J]. PHYSICAL REVIEW, 1964, 134 (5A): : 1359 - +

[7] ELECTRON PARAMAGNETIC RESONANCE OF DEFECTS IN IRRADIATED SILICON [J]. DISCUSSIONS OF THE FARADAY SOCIETY, 1961, (31): : 86 - &

[1] ANNEALING OF E CENTER IN IRRADIATED SILICON [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (03) : 252 - &

[2] HIRATA M, 1966, P INT S LATTICE DEFE

[3] HIRATA M, TO BE PUBLISHED

[4] SAITO H, 1963, JPN J APPL PHYS, V2, P678

[5] SPIN RESONANCE IN ELECTRON IRRADIATED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1198 - 1203

[6] DEFECTS IN IRRADIATED SILICON - ELECTRON PARAMAGNETIC RESONANCE + ELECTRON-NUCLEAR DOUBLE RESONANCE OF SI-E CENTER [J]. PHYSICAL REVIEW, 1964, 134 (5A): : 1359 - +

[7] ELECTRON PARAMAGNETIC RESONANCE OF DEFECTS IN IRRADIATED SILICON [J]. DISCUSSIONS OF THE FARADAY SOCIETY, 1961, (31): : 86 - &