EFFECT OF EXCITED-OXYGEN EXPOSURES ON SPECTRA AND TRANSITION DENSITY OF STATES FOR CLEAVED SI(111) FROM L1L2,3V AND L2,3VV AUGER TRANSITIONS

被引：6

作者：

BROCKMAN, RH

RUSSELL, GJ

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1982年 / 15卷 / 32期

关键词：

D O I：

10.1088/0022-3719/15/32/028

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：6677 / 6688

页数：12

共 30 条

[1] SURFACE VALENCE BAND AND PLASMON FEATURES ON CLEAN CLEAVED SILICON
ARNOTT, DR
HANEMAN, D
[J]. SURFACE SCIENCE, 1974, 45 (01) : 128 - 140
[2] AUGER SPECTROSCOPY OF SILICON
BISHOP, HE
RIVIERE, JC
TAYLOR, NJ
[J]. SURFACE SCIENCE, 1969, 17 (02) : 462 - &
[3] DENSITY OF STATES FOR CLEAVED SI (111) FROM L1L2,3V AND L2,3VV AUGER-SPECTRA
BROCKMAN, RH
RUSSELL, GJ
[J]. PHYSICAL REVIEW B, 1980, 22 (12): : 6302 - 6307
[4] BROCKMAN RH, 1981, PHYS REV B, V24, P3667, DOI 10.1103/PhysRevB.24.3667
[5] EARLY STAGES OF OXYGEN-ADSORPTION ON SILICON SURFACES AS SEEN BY ELECTRON-SPECTROSCOPY
CARRIERE, B
DEVILLE, JP
[J]. SURFACE SCIENCE, 1979, 80 (01) : 278 - 286
[6] THEORETICAL AND EXPERIMENTAL INVESTIGATIONS OF THE ELECTRONIC-STRUCTURE OF OXYGEN ON SILICON
CHEN, M
BATRA, IP
BRUNDLE, CR
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1216 - 1220
[7] CHARACTERISTIC ENERGIES IN SECONDARY ELECTRON SPECTRA FROM SI(111) SURFACES
CHUNG, MF
JENKINS, LH
[J]. SURFACE SCIENCE, 1971, 26 (02) : 649 - &
[8] EASTMAN DE, 1980, J VAC SCI TECHNOL, V17, P492, DOI 10.1116/1.570492
[9] PHOTOEMISSION STUDIES OF SURFACE-STATES AND OXIDATION OF GROUP-IV SEMICONDUCTORS
GARNER, CM
LINDAU, I
MILLER, JN
PIANETTA, P
SPICER, WE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01): : 372 - 375
[10] ELECTRON-SPECTROSCOPIC STUDIES OF THE EARLY STAGES OF THE OXIDATION OF SI
GARNER, CM
LINDAU, I
SU, CY
PIANETTA, P
SPICER, WE
[J]. PHYSICAL REVIEW B, 1979, 19 (08): : 3944 - 3956