OPTICALLY ENHANCED OXIDATION OF III-V COMPOUND SEMICONDUCTORS

被引：20

作者：

FUKUDA, M

TAKAHEI, K

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 01期

关键词：

D O I：

10.1063/1.335375

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：129 / 134

页数：6

相关论文

共 26 条

[1] OPTICAL MEASUREMENT OF FILM GROWTH ON SILICON AND GERMANIUM SURFACES IN ROOM AIR [J].

ARCHER, RJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (10) :619-622

[2] LASER-ENHANCED OXIDATION OF SI [J].

BOYD, IW .

APPLIED PHYSICS LETTERS, 1983, 42 (08) :728-730

[3] INFRARED DIELECTRIC CONSTANT AND ULTRAVIOLET OPTICAL PROPERTIES OF SOLIDS WITH DIAMOND ZINC BLENDE WURTZITE AND ROCKSALT STRUCTURE [J].

CARDONA, M .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (07) :2181-&

[4] OPTICAL STUDIES OF BAND STRUCTURE OF INP [J].

CARDONA, M .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (05) :958-&

[5] FACET OXIDATION OF INGAASP/INP AND INGAAS/INP LASERS [J].

FUKUDA, M .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (11) :1692-1698

[6] DEGRADATION OF INGAASP-INP DH LASERS IN WATER DUE TO FACET DETERIORATION [J].

FUKUDA, M ;

WAKITA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (11) :L667-L670

[7] LASER-BEAM HEATING AND HIGH-TEMPERATURE BAND-TO-BAND LUMINESCENCE OF GAAS AND INP [J].

KIRILLOV, D ;

MERZ, JL .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) :4104-4109

[8] THERMAL-OXIDATION OF GAAS [J].

KOSHIGA, F ;

SUGANO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 :465-469

[9] TEMPERATURE RISE INDUCED BY A LASER-BEAM [J].

LAX, M .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) :3919-3924

[10]

LOSCHKE K, 1975, KRIST TECH, V10, pK45