DEGRADATION OF INGAASP-INP DH LASERS IN WATER DUE TO FACET DETERIORATION

被引：10

作者：

FUKUDA, M

WAKITA, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 11期

关键词：

D O I：

10.1143/JJAP.19.L667

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：L667 / L670

页数：4

相关论文

共 10 条

[1] ANODIC OXIDE ON GAAS - QUANTITATIVE CHEMICAL DEPTH PROFILES OBTAINED USING AUGER-SPECTROSCOPY AND NEUTRON-ACTIVATION ANALYSIS
CHANG, CC
SCHWARTZ, B
MURARKA, SP
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (06) : 922 - 926
[2] LONG-TERM DEGRADATION OF GAAS-GA1-XALXAS DH LASERS DUE TO FACET EROSION
CHINONE, N
NAKASHIMA, H
ITO, R
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 1160 - 1162
[3] INFLUENCE OF DEVICE FABRICATION PARAMETERS ON GRADUAL DEGRADATION OF (AIGA)AS CW LASER-DIODES
LADANY, I
KRESSEL, H
[J]. APPLIED PHYSICS LETTERS, 1974, 25 (12) : 708 - 710
[4] RAPID DEGRADATION PHENOMENON IN HETEROJUNCTION GAALAS-GAAS LASERS
PETROFF, P
HARTMAN, RL
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (09) : 3899 - 3903
[5] 1500-H CONTINUOUS CW OPERATION OF DOUBLE-HETEROSTRUCTURE GALNASP-INP LASERS
SHEN, CC
HSIEH, JJ
LIND, TA
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (07) : 353 - 354
[6] DEGRADATION OF (GAAL)AS-GAAS DH LASERS IN WATER DUE TO FACET DETERMATION
WAKITA, K
FUKUDA, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (12) : 2175 - 2176
[7] AUGER ANALYSIS OF ANODIC OXIDE INP INTERFACE
WILMSEN, CW
KEE, RW
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 953 - 956
[8] ANALYSIS OF OXIDE-SEMICONDUCTOR INTERFACE USING AUGER AND ESCA AS APPLIED TO INP AND GAAS
WILMSEN, CW
KEE, RW
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1513 - 1517
[9] 10000-H CONTINUOUS CW OPERATION OF IN1-XGAXASYP1-Y-INP DH-LASERS AT ROOM-TEMPERATURE
YAMAMOTO, T
SAKAI, K
AKIBA, S
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (08) : 684 - 687
[10] DEGRADATION OF (ALGA)AS DH LASERS DUE TO FACET OXIDATION
YUASA, T
OGAWA, M
ENDO, K
YONEZU, H
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (02) : 119 - 121