STUDY OF THE INITIAL ADSORPTION OF NITROGEN ON SIC(100)-(2X1)

被引：10

作者：

BERMUDEZ, VM

机构：

[1] Naval Research Laboratory, Washington

来源：

SURFACE SCIENCE | 1992年 / 276卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(92)90695-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The initial adsorption of nitrogen (by filament-assisted exposure to N2) on the SiC(100)-(2 x 1) surface at approximately 800-1000-degrees-C has been studied using Auger electron spectroscopy and low energy electron diffraction. N adsorbs at low coverage in either a c(2 x 6) or c(4 x 4) structure. At higher coverage, about two-thirds of a monolayer, a (1 x 3)-ordered layer forms and further adsorption is slow. A model is proposed for the (1 x 3)N structure involving rows of Si-N-Si bridges with every third row missing.

引用

页码：59 / 68

页数：10

共 35 条

[1] THE REACTION OF SI(100) 2X1 WITH NO AND NH3 - THE ROLE OF SURFACE DANGLING BONDS [J].

AVOURIS, P ;

BOZSO, F ;

HAMERS, RJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (05) :1387-1392

[2] INVESTIGATION OF THE STRUCTURE AND STABILITY OF THE PT/SIC(001) INTERFACE [J].

BERMUDEZ, VM ;

KAPLAN, R .

JOURNAL OF MATERIALS RESEARCH, 1990, 5 (12) :2882-2893

[3] PHOTOEMISSION-STUDY OF OXYGEN-ADSORPTION ON (001) SILICON-CARBIDE SURFACES [J].

BERMUDEZ, VM .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (12) :6084-6092

[4] PHOTOEMISSION-STUDIES OF THE REACTIONS OF AMMONIA AND N-ATOMS WITH SI(100)-(2X1) AND SI(111)-(7X7) SURFACES [J].

BOZSO, F ;

AVOURIS, P .

PHYSICAL REVIEW B, 1988, 38 (06) :3937-3942

[5] SURFACE-PROPERTIES OF SI(111)7 X 7 UPON NH3 ADSORPTION AND VACUUM ANNEALING [J].

CHERIF, SM ;

LACHARME, JP ;

SEBENNE, CA .

SURFACE SCIENCE, 1991, 243 (1-3) :113-120

[6]

DAVIS LE, 1976, HDB AUGER ELECTRON S

[7] NITRIDATION OF SILICON (111) - AUGER AND LEED RESULTS [J].

DELORD, JF ;

SCHROTT, AG ;

FAIN, SC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01) :517-520

[8] ELECTRON ENERGY-LOSS SPECTRA OF SI(111) REACTED WITH NITROGEN-ATOMS [J].

EDAMOTO, K ;

TANAKA, S ;

ONCHI, M ;

NISHIJIMA, M .

SURFACE SCIENCE, 1986, 167 (2-3) :285-296

[9] KINETICS OF SI(100) NITRIDATION 1ST STAGES BY AMMONIA - ELECTRON-BEAM-INDUCED THIN-FILM GROWTH AT ROOM-TEMPERATURE [J].

GLACHANT, A ;

SAIDI, D .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :985-991

[10] A LEED, AES AND TDS STUDY OF VERY THIN NITRIDE FILM GROWTH ON SI(100) BY DIRECT THERMAL NITRIDATION IN NH3 [J].

GLACHANT, A ;

SAIDI, D ;

DELORD, JF .

SURFACE SCIENCE, 1986, 168 (1-3) :672-680

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