HIGH MODULATION EFFICIENCY OF INTRACAVITY CONTACTED VERTICAL-CAVITY LASERS

被引：41

作者：

SCOTT, JW ^{[1
]}

THIBEAULT, BJ ^{[1
]}

MAHON, CJ ^{[1
]}

COLDREN, LA ^{[1
]}

PETERS, FH ^{[1
]}

机构：

[1] OPT CONCEPTS INC,LOMPOC,CA 93436

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 12期

关键词：

D O I：

10.1063/1.112019

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A very high current modulation efficiency of 5.7 GHz/square-root(mA) has been demonstrated in a low threshold (0.85 mA) InGaAs vertical-cavity surface-emitting laser. These top surface emission devices have been fabricated with intracavity contacts on semi-insulating substrates to realize their high speed potential. Data is presented for various laser diameters. Modulation bandwidths up to 9.3 GHz at a bias of only 4.5 mA have been measured for 7 mum diameter lasers. Derived parameters indicate that considerably higher bandwidths should be possible with better heat dissipation and modified cavity designs.

引用

页码：1483 / 1485

页数：3

共 7 条

[1] VERY HIGH MODULATION EFFICIENCY OF ULTRALOW THRESHOLD CURRENT SINGLE-QUANTUM-WELL INGAAS LASERS [J].