HIGH-EFFICIENCY SUBMILLIAMP VERTICAL-CAVITY LASERS WITH INTRACAVITY CONTACTS

被引：52

作者：

SCOTT, JW ^{[1
]}

THIBEAULT, BJ ^{[1
]}

YOUNG, DB ^{[1
]}

COLDREN, LA ^{[1
]}

PETERS, FH ^{[1
]}

机构：

[1] OPT CONCEPTS INC,LOMPOC,CA 93436

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1994年 / 6卷 / 06期

关键词：

D O I：

10.1109/68.300160

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Contacts have been made to p- and n-type layers on opposite sides of the active region within the cavity of an InGaAs vertical cavity surface emitting laser. The two concentric ring contacts allow all electrical connections on and emission from the top surface of a semi-insulating GaAs substrate. The design includes a novel current leveling!ayer to minimize current crowding effects. A high external quantum efficiency of 46% has been measured with maximum output powers up to 6 Mw for a 15 mum diameter device and threshold currents of 0.72 Ma for a 7 mum diameter laser.

引用

页码：678 / 680

页数：3

共 13 条

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