REDUCTION OF P-DOPED MIRROR ELECTRICAL-RESISTANCE OF GAAS/ALGAAS VERTICAL-CAVITY SURFACE-EMITTING LASERS BY DELTA-DOPING

被引：31

作者：

KOJIMA, K

MORGAN, RA

MULLALY, T

GUTH, GD

FOCHT, MW

LEIBENGUTH, RE

ASOM, MT

机构：

[1] AT&T Bell Laboratories, Solid State Technology Center, Breinigsville

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 20期

关键词：

SEMICONDUCTOR LASERS; LASERS; DELTA-DOPING;

D O I：

10.1049/el:19931179

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The Letter reports the reduction of p-mirror electrical resistance using a very simple delta doping technique. The differential resistance was reduced almost by half, and the peak output power was increased by about 40% with delta doping. No significant difference was observed in threshold current and efficiency.

引用

页码：1771 / 1772

页数：2

共 10 条

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