HIGH SINGLE-MODE POWER CONVERSION EFFICIENCY VERTICAL-CAVITY TOP-SURFACE-EMITTING LASERS

被引：16

作者：

LEAR, KL

CHALMERS, SA

机构：

[1] Photonics Research Department, Sandia National Laboratories, Albuquerque

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1993年 / 5卷 / 09期

关键词：

D O I：

10.1109/68.257162

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report advances in the power conversion (wall-plug) efficiency of vertical-cavity top-surface-emitting lasers. The devices were fabricated from molecular beam epitaxial layers using deep proton implants to define gain-guided lasers. The epitaxial structure included low resistance, piecewise linearly graded n-type and p-type mirrors, a triple In0.2Ga0.8As quantum-well active region, and a delta-doped contact layer. Power conversion efficiencies as high as 12.7% for continuous-wave single-mode operation were measured after several hours of device operation.

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收藏

页码：972 / 975

页数：4

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