STABLE PASSIVATION SYSTEMS FOR GAAS PREPARED BY ROOM-TEMPERATURE DEPOSITION OF SIO2-FILMS

被引：11

作者：

HASHIZUME, T

YOSHINO, M

ISHIKAWA, M

SHIMOZUMA, M

机构：

[1] HOKKAIDO UNIV,DEPT ELECT ENGN,SAPPORO,HOKKAIDO 060,JAPAN

[2] HOKKAIDO UNIV,COLL MED TECHNOL,SAPPORO,HOKKAIDO 060,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 7A期

关键词：

SURFACE PASSIVATION; INTERFACE; ACTIVATION; SIO2/GAAS; PCVD; RTA; XPS;

D O I：

10.1143/JJAP.33.3887

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The 50-Hz plasma enhanced chemical vapor deposition technique allowed the deposition of high-quality SiO2 onto GaAs at room temperature without destroying the surface structure of amorphous-As covered GaAs, resulting in the stable SiO2/As/GaAs passivation system. Abrupt carrier profiles were reproducibly obtained for the Si-implanted and rapid thermal annealed GaAs using this passivation system.

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收藏

页码：3887 / 3888

页数：2

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