ARXPS ANALYSIS ON AS-PASSIVATED GAAS-SURFACES BY HF DIPPING METHOD

被引：17

作者：

MENDA, K ^{[1
]}

KANDA, E ^{[1
]}

YOKOYAMA, T ^{[1
]}

机构：

[1] SUMITOMO MET MIN CO LTD,ELECTR MAT LAB,OHME,TOKYO 108,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1990年 / 29卷 / 03期

关键词：

Gallium arsenide; Passivation; Surface cleaning; Surface preparation; X-ray photoemission spectroscopy;

D O I：

10.1143/JJAP.29.L391

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Undoped (001)GaAs surfaces have been analyzed with angular-resolve X-ray photoemission spectroscopy (ARXPS). The ARXPS analysis was performed on the GaAs surfaces which had been exposed to air for about 3 weeks after chemical etching or HF dipping. Both Ga2O3 and As2O3 signals were detected on the etched surface, whereas the Ga2O3 signal was not detected on the HF-dipped surface. This implies that the HF-dipped surface can be cleaned in vacuum by a thermal treatment at ∼500°C. © 1990 The Japan Society of Applied Physics.

引用

页码：L391 / L393

页数：3

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