SINGLE-CRYSTAL GROWTH OF ZNS BY THE METHOD OF GAS SOURCE MBE

被引：13

作者：

KANEDA, S ^{[1
]}

SATOU, S ^{[1
]}

SETOYAMA, T ^{[1
]}

MOTOYAMA, S ^{[1
]}

YOKOYAMA, M ^{[1
]}

OTA, N ^{[1
]}

机构：

[1] NIPPON SEIKI CO LTD,NAGAOKA 940,JAPAN

来源：

关键词：

D O I：

10.1016/0022-0248(86)90391-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：440 / 448

页数：9

共 20 条

[1] HYDROGEN-SULFIDE DOPING OF GAAS AND ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY (MBE)
BRIONES, F
GOLMAYO, D
GONZALEZ, L
DEMIGUEL, JL
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1985, 36 (03): : 147 - 151
[2] EFFECT OF H-2 ON RESIDUAL IMPURITIES IN GAAS MBE LAYERS
CALAWA, AR
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (12) : 1020 - 1022
[3] ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS
CALAWA, AR
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (09) : 701 - 703
[4] DAYTON BB, 1957, 1956 T NATL S VAC TE, P5
[5] GROWTH OF CUBIC ZNS, ZNSE AND ZNSXSE1-X SINGLE-CRYSTALS BY IODINE TRANSPORT
FUJITA, S
MIMOTO, H
TAKEBE, H
NOGUCHI, T
[J]. JOURNAL OF CRYSTAL GROWTH, 1979, 47 (03) : 326 - 334
[6] GROWTH OF ZNS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
FUJITA, S
TOMOMURA, Y
SASAKI, A
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (09): : L583 - L585
[7] GORDEN S, 1971, NASA SP273
[8] HONIG RE, 1969, RCA REV, V30, P285
[9] KANEDA S, 1985, 17TH C SOL STAT DEV, P225
[10] KANEDA S, 1985, 15TH EUR C ESSDERC H, V9, P65