HYDROGEN-SULFIDE DOPING OF GAAS AND ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY (MBE)

被引：6

作者：

BRIONES, F

GOLMAYO, D

GONZALEZ, L

DEMIGUEL, JL

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1985年 / 36卷 / 03期

关键词：

D O I：

10.1007/BF00624935

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：147 / 151

页数：5

共 22 条

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