GROWTH OF HIGH-QUALITY EPITAXIAL GAAS FILMS BY SPUTTER DEPOSITION

被引：1

作者：

BARNETT, SA

BAJOR, G

GREENE, JE

机构：

[1] UNIV ILLINOIS,DEPT MECH ENGN,URBANA,IL 61801

[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[3] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 18卷 / 03期

关键词：

D O I：

10.1116/1.570991

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：906 / 907

页数：2

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