GROWTH OF METASTABLE INSB1-XBIX THIN-FILMS BY MULTITARGET SPUTTERING

被引：31

作者：

ZILKO, JL

GREENE, JE

机构：

[1] UNIV ILLINOIS,DEPT MECH ENGN,URBANA,IL 61801

[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1978年 / 33卷 / 03期

关键词：

D O I：

10.1063/1.90317

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：254 / 256

页数：3

共 15 条

[1] GAAS, GAP, AND GAASXP1-X EPITAXIAL FILMS GROWN BY MOLECULAR BEAM DEPOSITION [J].

ARTHUR, JR ;

LEPORE, JJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04) :545-&

[2]

BARNETT SA, UNPUBLISHED

[3]

BUGAKOV VI, 1976, IZV ACAD NAUK M FTMN, V3, P29

[4]

COLBY JW, UNPUBLISHED

[5] ELECTRON SCATTERING IN INSB [J].

EHRENREICH, H .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 2 (02) :131-149

[6]

ELTOUHKY AH, UNPUBLISHED

[7]

ELTOUHKY AH, 1978, APPL PHYS LETT, V33

[8] INTERLAYER DIFFUSION IN INSB-GASB SUPERLATTICE STRUCTURE GROWN BY MULTITARGET RF SPUTTERING [J].

ELTOUKHY, AH ;

ZILKO, JL ;

WICKERSHAM, CE ;

GREENE, JE .

APPLIED PHYSICS LETTERS, 1977, 31 (03) :156-158

[9] EPITAXIAL-GROWTH OF IN1-X GAX SB THIN-FILMS BY MULTITARGET RF SPUTTERING [J].

GREENE, JE ;

WICKERSHAM, CE ;

ZILKO, JL .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) :2289-2297

[10] PROPERTIES OF INSB(1-X)BI(X) ALLOYS .I. ELECTRICAL MEASUREMENTS [J].

JEANLOUIS, AM ;

HAMON, C .

PHYSICA STATUS SOLIDI, 1969, 34 (01) :329-+

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