NOISE CHARACTERISTICS OF A CRYOGENICALLY COOLED GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR AT 4 MHZ

[1] Blair D. G., 1983, Gravitational Radiation. NATO Advanced Study Institute, Les Houches Summer School, P339

[2] GAAS JUNCTION FIELD-EFFECT TRANSISTORS FOR LOW-TEMPERATURE ENVIRONMENTS [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1978, 49 (11) : 1603 - 1604

[3] APPROACHING THE QUANTUM LIMIT FOR FORCE DETECTION [J]. PHYSICAL REVIEW LETTERS, 1981, 47 (17) : 1184 - 1187

[4] SEMICONDUCTOR-DEVICES SUITABLE FOR USE IN CRYOGENIC ENVIRONMENTS [J]. CRYOGENICS, 1974, 14 (08) : 439 - 447

[5] PERFORMANCE OF GAAS MESFETS AT LOW-TEMPERATURES [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) : 376 - 381

[6] UHF ULTRA LOW-NOISE CRYOGENIC FET PRE-AMPLIFIER [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1982, 15 (01): : 101 - 104

[7] SIMPSON RE, 1974, INTRO ELECTRONICS SC

[1] Blair D. G., 1983, Gravitational Radiation. NATO Advanced Study Institute, Les Houches Summer School, P339

[2] GAAS JUNCTION FIELD-EFFECT TRANSISTORS FOR LOW-TEMPERATURE ENVIRONMENTS [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1978, 49 (11) : 1603 - 1604

[3] APPROACHING THE QUANTUM LIMIT FOR FORCE DETECTION [J]. PHYSICAL REVIEW LETTERS, 1981, 47 (17) : 1184 - 1187

[4] SEMICONDUCTOR-DEVICES SUITABLE FOR USE IN CRYOGENIC ENVIRONMENTS [J]. CRYOGENICS, 1974, 14 (08) : 439 - 447

[5] PERFORMANCE OF GAAS MESFETS AT LOW-TEMPERATURES [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) : 376 - 381

[6] UHF ULTRA LOW-NOISE CRYOGENIC FET PRE-AMPLIFIER [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1982, 15 (01): : 101 - 104

[7] SIMPSON RE, 1974, INTRO ELECTRONICS SC