LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION OF INGAP USING TERTIARYBUTYLPHOSPHINE

Alloy composition controllability and V/III ratio influence upon crystal quality have been studied for low pressure metalorganic chemical vapor deposition (MOCVD) of InGaP using tertiarybutylphosphine (TBP). The relationship between lattice mismatch and vapor phase composition for the growth using TBP was almost the same as for the growth using PH3 InGaP epilayers, with completely mirror-like surfaces, were obtained, suggesting that undesirable prereactions between TBP and group III precursors were suppressed in low pressure MOCVD using TBP. High quality undoped and Zn-doped InGaP epilayers were obtained at a low V/III ratio of 20. It was confirmed that TBP had the possibility of being an alternative precursor to PH3 for low pressure MOCVD of InGaP lattice-matched with GaAs.