ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF INP USING NEW PHOSPHORUS SOURCES

被引：31

作者：

LARSEN, CA

CHEN, CH

KITAMURA, M

STRINGFELLOW, GB

BROWN, DW

ROBERTSON, AJ

机构：

[1] AMER CYANAMID CO,DIV CHEM RES,DEPT DISCOVERY RES,STAMFORD,CT 06904

[2] CYANAMID CANADA INC,WELLAND RES,NIAGARA,ONTARIO,CANADA

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 22期

关键词：

D O I：

10.1063/1.96858

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1531 / 1533

页数：3

共 18 条

[1] THE USE OF A METALORGANIC COMPOUND FOR THE GROWTH OF INP-EPITAXIAL LAYERS [J].

BENZ, KW ;

RENZ, H ;

WEIDLEIN, J ;

PILKUHN, MH .

JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (01) :185-192

[2] PROCEEDINGS OF THE 2ND INTERNATIONAL-CONFERENCE ON METALORGANIC VAPOR-PHASE EPITAXY, SHEFFIELD, UK, 10-12 APRIL 1984 - SAFETY SESSION [J].

COLEHAMILTON, DJ .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :R11-R13

[3]

COTTON FA, 1980, ADV INORGANIC CHEM, P445

[4] HIGH-PURITY GAAS PREPARED FROM TRIMETHYLGALLIUM AND ARSINE [J].

DAPKUS, PD ;

MANASEVIT, HM ;

HESS, KL ;

LOW, TS ;

STILLMAN, GE .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :10-23

[5] THE PHOSPHONOUS ACIDS AND THEIR DERIVATIVES [J].

FRANK, AW .

CHEMICAL REVIEWS, 1961, 61 (04) :389-424

[6] PHOTOLUMINESCENCE OF ORGANOMETALLIC VAPOR-PHASE EPITAXIAL GALNAS [J].

FRY, KL ;

KUO, CP ;

COHEN, RM ;

STRINGFELLOW, GB .

APPLIED PHYSICS LETTERS, 1985, 46 (10) :955-957

[7]

HEIM U, 1969, SOLID STATE COMMUN, V7, P173

[8] OMVPE GROWTH OF INP USING TMIN [J].

HSU, CC ;

COHEN, RM ;

STRINGFELLOW, GB .

JOURNAL OF CRYSTAL GROWTH, 1983, 63 (01) :8-12

[9]

LARSEN CA, UNPUB J CRYST GROWTH

[10] USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .I. EPITAXIAL GALLIUM-V COMPOUNDS [J].

MANASEVIT, HM ;

SIMPSON, WI .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (12) :1725-+

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