INASP/INGAP ALL-TERNARY STRAIN-COMPENSATED MULTIPLE-QUANTUM WELLS AND THEIR APPLICATION TO LONG-WAVELENGTH LASERS

By introducing InGaP tensile-strained layers as barriers of InAsP compressively strained multiple quantum wells, InAsP/InGaP strain-compensated multiple quantum wells with high crystalline quality were successfully grown by metalorganic chemical vapor deposition. For the first time, a laser, emitting at 1.2 mu m, consisting of allternary quantum wells as an active layer was fabricated. The threshold current density of 1 kA/cm(2) was obtained without the use of a separate confinement heterostructure layer for a cavity length of 1000 mu m.