STRAIN COMPENSATED INASP/INP/INGAP MULTIPLE-QUANTUM-WELL FOR 1.5 MU-M WAVELENGTH

被引：25

作者：

JIANG, XS

YU, PKL

机构：

[1] Department of Electrical and Computer Engineering, University of California at San Diego, San Diego

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 20期

关键词：

D O I：

10.1063/1.112627

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report metalorganic vapor phase epitaxy growth of InAs 0.66P0.34/InP/In0.74Ga0.26P strain compensated multiple quantum wells (MQWs) at 1.5 μm wavelength. A composite InP/InGaP/InP barrier structure is used to tune the net strain of the MQWs. Compared with InAs0.66P0.34/InP strained MQWs grown under similar conditions, the InAs0.66P0.34/InP/In 0.74Ga0.26P strain compensated MQWs show improvement in crystalline and optical quality. © 1994 American Institute of Physics.

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页码：2536 / 2538

页数：3

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