WIDE WAVELENGTH AND LOW DARK CURRENT LATTICE-MISMATCHED INGAAS/INASP PHOTODIODES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

被引：57

作者：

WADA, M

HOSOMATSU, H

机构：

[1] Devices Laboratory, Corporate RandD Division, Yokogawa Electric Corporation, Musashino-shi, Tokyo 180

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 10期

关键词：

D O I：

10.1063/1.110860

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using a very thin InP/InAsP cap layer and InAsP strained superlattices in a buffer layer, a lattice-mismatched InGaAs/InAsP photodiode with low dark current and very wide wavelength spectral response was fabricated by metalorganic vapor-phase epitaxy. External quantum efficiencies as high as 55% at 0.6 mum, 80%-90% at 0.8-1.9 mum, and 65% at 2.1 mum was obtained. For the 1-mm-diam photodiodes, typical dark current measured at 274 K and at a reverse bias voltage of 0.1 V was as low as 1 X 10(-7) A.

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页码：1265 / 1267

页数：3

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