DARK CURRENT ANALYSIS AND CHARACTERIZATION OF INXGA1-XAS/INASYP1-Y GRADED PHOTODIODES WITH X-GREATER-THAN-0.53 FOR RESPONSE TO LONGER WAVELENGTHS (GREATER-THAN-1.7-MU-M)

被引：65

作者：

LINGA, KR ^{[1
]}

OLSEN, GH ^{[1
]}

BAN, VS ^{[1
]}

JOSHI, AM ^{[1
]}

KOSONOCKY, WF ^{[1
]}

机构：

[1] NEW JERSEY INST TECHNOL,DEPT ELECT & COMP ENGN,NEWARK,NJ 07102

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 1992年 / 10卷 / 08期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1109/50.156844

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes the dark current properties of InxGa1-xAs photodiodes, where x is varied from 0.53 to 0.82 for extending the long wavelength cutoff from 1.7 to 2.6-mu-m. Detailed analyses of optoelectrical parameters of In0.82Ga0.18As photodiodes are presented. Dark current, which is a critical parameter and limits the operation of the photodiode, is analyzed and compared with the experimental values. Typical characteristics of photodiodes with cutoff wavelengths of 1.7-mu-m(x = 0.53), 2.2-mu-m(x = 0.72) and 2.6-mu-m(.x = 0.82) are presented. Typical and best values of dark current obtained are presented.

引用

页码：1050 / 1055

页数：6

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