GA1-YINYAS/INASXP1-X (Y-GREATER-THAN-0.53, X-GREATER-THAN-0) PIN PHOTODIODES FOR LONG WAVELENGTH REGIONS (LAMBDA-GREATER-THAN-2-MU-M) GROWN BY HYDRIDE VAPOR-PHASE EPITAXY

被引：19

作者：

MAKITA, K ^{[1
]}

TORIKAI, T ^{[1
]}

ISHIHARA, H ^{[1
]}

TAGUCHI, K ^{[1
]}

机构：

[1] NEC CORP,DIV COMPOUND SEMICOND DEVICE,NAKAHARA KU,KAWASAKI 211,JAPAN

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 07期

关键词：

D O I：

10.1049/el:19880256

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：379 / 380

页数：2

相关论文

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