OXYGEN ADDITION PURIFICATION EFFECT IN INGAAS GROWTH BY HYDRIDE VPE

被引：11

作者：

MAKITA, K ^{[1
]}

TAGUCHI, K ^{[1
]}

USUI, A ^{[1
]}

机构：

[1] NEC CORP,FUNDAMENTAL RES LABS,MIYAMAE KU,KAWASAKI 213,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1984年 / 69卷 / 2-3期

关键词：

D O I：

10.1016/0022-0248(84)90373-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：613 / 615

页数：3

共 10 条

[1] EFFECT OF BAKING TEMPERATURE ON PURITY OF LPE GA0.47IN0.53AS
AMANO, T
TAKAHEI, K
NAGAI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) : 2105 - 2109
[2] HYDRIDE MULTIBARREL REACTORS SUITABLE FOR MICROWAVE AND OPTOELECTRONIC (GA,IN)(AS,P) HETEROSTRUCTURE GROWTH
BEUCHET, G
BONNET, M
THEBAULT, P
DUCHEMIN, JP
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 57 (02) : 379 - 386
[3] TIN DOPING IN GA0.47IN0.53AS AND AL0.48IN0.52AS GROWN BY MOLECULAR-BEAM EPITAXY
CHENG, KY
CHO, AY
WAGNER, WR
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (10) : 6328 - 6330
[4] MAKITA K, UNPUB
[5] VAPOR-PHASE GROWTH OF INGAASP-INP DH STRUCTURES BY THE DUAL-GROWTH-CHAMBER METHOD
MIZUTANI, T
YOSHIDA, M
USUI, A
WATANABE, H
YUASA, T
HAYASHI, I
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (02) : L113 - L116
[6] NARAYAN SY, 1981, RCA REV, V42, P491
[7] EFFECT OF OXYGEN INJECTION DURING VPE GROWTH OF GAAS FILMS
PALM, L
BRUCH, H
BACHEM, KH
BALK, P
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (05) : 555 - 570
[8] LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION OF INP AND RELATED-COMPOUNDS
RAZEGHI, M
POISSON, MA
LARIVAIN, JP
DUCHEMIN, JP
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (02) : 371 - 395
[9] TWO-DIMENSIONAL ELECTRON-GAS IN A SELECTIVELY DOPED INP/IN0.53GA0.47AS HETEROSTRUCTURE GROWN BY CHLORIDE TRANSPORT VAPOR-PHASE EPITAXY
TAKIKAWA, M
KOMENO, J
OZEKI, M
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (03) : 280 - 282
[10] HIGH-PURITY INP GROWN BY HYDRIDE VPE TECHNIQUE WITH IMPURITY GETTERING BY INDIUM SOURCE AND OXYGEN
USUI, A
WATANABE, H
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (05) : 891 - 902

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