2.6 MU-M INGAAS PHOTODIODES

被引：56

作者：

MARTINELLI, RU

ZAMEROWSKI, TJ

LONGEWAY, PA

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 11期

关键词：

D O I：

10.1063/1.100050

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：989 / 991

页数：3

共 16 条

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[2]

ENSTROM RE, 1970, 3RD P INT S GALL ARS, P30

[3]

LADANY I, 1976, APPL OPT, V25, P472

[4]

LONGEWAY PA, 1988, J CRYST GROWTH, V89

[5] IMPROVED TRANSMISSION SECONDARY-EMISSION FROM IN-XGA-1-XP/GAAS SELF-SUPPORTING FILMS ACTIVATED TO NEGATIVE ELECTRON-AFFINITY [J].

MARTINELLI, RU ;

OLSEN, GH .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) :1332-1336

[6] ULTIMATE LOW-LOSS SINGLE-MODE FIBER AT 1.55 MU-M [J].

MIYA, T ;

TERUNUMA, Y ;

HOSAKA, T ;

MIYASHITA, T .

ELECTRONICS LETTERS, 1979, 15 (04) :106-108

[7]

MOSELEY AJ, 1986, ELECTRON LETT, V22, P1207

[8] ROOM-TEMPERATURE HETEROJUNCTION LASER-DIODES OF INXGA1-XAS-INYGA1-YP WITH EMISSION WAVELENGTH BETWEEN 0.9 AND 1.15MU [J].

NUESE, CJ ;

OLSEN, GH .

APPLIED PHYSICS LETTERS, 1975, 26 (09) :528-531

[9] CW ROOM-TEMPERATURE INXGA1-XAS-INYGA1-YP 1.06-MUM LASERS [J].

NUESE, CJ ;

OLSEN, GH ;

ETTENBERG, M ;

GANNON, JJ ;

ZAMEROWSKI, TJ .

APPLIED PHYSICS LETTERS, 1976, 29 (12) :807-809

[10] CRYSTAL-GROWTH AND PROPERTIES OF BINARY, TERNARY AND QUATERNARY (IN,GA)(AS,P) ALLOYS GROWN BY THE HYDRIDE VAPOR-PHASE EPITAXY TECHNIQUE [J].

OLSEN, GH ;

ZAMEROWSKI, TJ .

PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1979, 2 (04) :309-375

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