IMPROVEMENT OF INP CRYSTAL QUALITY GROWN ON GAAS SUBSTRATES AND DEVICE APPLICATIONS

被引：33

作者：

KIMURA, T

ISHIMURA, E

UESUGI, F

TSUGAMI, M

MIZUGUCHI, K

MUROTANI, T

机构：

[1] Optoelectronic and Microwave Devices R, D Laboratory, Mitsubishi Electric Corporation, Itami, Hyogo, 664, 4-1, Mizuhara

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 107卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90564-L

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have investigated the effect of strained-layer superlattice (SLS) buffer layers on the crystal quality of InP grown on GaAs substrates. The various SLSs such as In0.63Ga0.37As/InP, In0.73Ga0.27As/InP, In0.9Ga0.1P/InP, and GaAs/InP were tested. It is found that the optical property of InP layers grown on In0.63Ga0.37As/InP SLSs was dramatically improved. An InGaAsP/InP double heterostructure laser diode and an InGaAs PIN photodiode (PD) on InP/GaAs with an In0.63Ga0.37As/InP SLS have been fabricated. The CW threshold current of the laser at room temperature was as low as 31 mA, and the dark current of the PD was 30 nA at -10 V.

引用

页码：827 / 831

页数：5

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