IMPROVEMENT OF INP CRYSTAL QUALITY ON GAAS SUBSTRATES BY THERMAL CYCLIC ANNEALING

被引：19

作者：

HAYAFUJI, N ^{[1
]}

KIMURA, T ^{[1
]}

YOSHIDA, N ^{[1
]}

KANENO, N ^{[1
]}

TSUGAMI, M ^{[1
]}

MIZUGUCHI, K ^{[1
]}

MUROTANI, T ^{[1
]}

IBUKI, S ^{[1
]}

机构：

[1] SETSUNAN UNIV, FAC ENGN, NEYAGAWA, OSAKA 572, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 10期

关键词：

D O I：

10.1143/JJAP.28.L1721

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L1721 / L1724

页数：4

共 14 条

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