OPTICAL AND ELECTRICAL-PROPERTIES OF GLOW-DISCHARGE SILICON FILMS

被引：4

作者：

AUGELLI, V ^{[1
]}

MURRI, R ^{[1
]}

SCHIAVULLI, L ^{[1
]}

机构：

[1] CNR,GRP NAZL STRUTTURA MAT,BARI,ITALY

来源：

关键词：

D O I：

10.1016/0040-6090(82)90635-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：153 / 159

页数：7

共 15 条

[1] PHYSICAL CHARACTERIZATION OF HALOGENATED AND HYDROGENATED AMORPHOUS-SILICON FILMS
AUGELLI, V
MURRI, R
GALASSINI, S
TEPORE, A
[J]. THIN SOLID FILMS, 1980, 69 (03) : 315 - 320
[2] BRUNO G, 1980, THIN SOLID FILMS, V63, P103
[3] CONNEL GAN, 1973, PHYS STATUS SOLIDI B, V50, P291
[4] USE OF HYDROGENATION IN STRUCTURAL AND ELECTRONIC STUDIES OF GAP STATES IN AMORPHOUS-GERMANIUM
CONNELL, GAN
PAWLIK, JR
[J]. PHYSICAL REVIEW B, 1976, 13 (02): : 787 - 804
[5] OPTICAL-CONSTANTS OF RF SPUTTERED HYDROGENATED AMORPHOUS SI
FREEMAN, EC
PAUL, W
[J]. PHYSICAL REVIEW B, 1979, 20 (02): : 716 - 728
[6] IQBAL Z, 1981, THIN SOLID FILMS, V87, P43
[7] KRUEHLER WW, 1980, J NONCRYST SOLIDS, V35, P263
[8] Loveland R. J., 1973, Journal of Non-Crystalline Solids, V13, P55, DOI 10.1016/0022-3093(73)90035-5
[9] PROPERTIES OF AMORPHOUS SI-F-H ALLOYS
MADAN, A
OVSHINSKY, SR
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 171 - 181
[10] AN AMORPHOUS-SILICON FILM USABLE AT HIGH-TEMPERATURE - ANNEALING PROPERTIES OF A NEW FLUORINATED AMORPHOUS-SILICON
MATSUMURA, H
NAKAGOME, Y
FURUKAWA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 111 - 114