MILLIMETER-WAVE GAAS DISTRIBUTED IMPATT DIODES

被引:15
作者
BAYRAKTAROGLU, B
SHIH, HD
机构
关键词
D O I
10.1109/EDL.1983.25777
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:393 / 395
页数:3
相关论文
共 9 条
[1]   INTEGRAL PACKAGING FOR MILLIMETRE-WAVE GAAS IMPATT DIODES PREPARED BY MOLECULAR-BEAM EPITAXY [J].
BAYRAKTAROGLU, B ;
SHIH, HD .
ELECTRONICS LETTERS, 1983, 19 (09) :327-329
[2]  
DAVYDOVA NS, 1972, TELECOMM RADIO ENG+, V26, P112
[3]   THE TRAVELING WAVE IMPATT MODE .2. THE EFFECTIVE WAVE IMPEDANCE AND EQUIVALENT TRANSMISSION-LINE [J].
FRANZ, M ;
BEYER, JB .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1980, 28 (03) :215-218
[4]  
FRANZ M, 1978, IEEE T MICROW THEORY, V26, P861, DOI 10.1109/TMTT.1978.1129504
[5]   MILLIMETER-WAVE MICROSTRIP OSCILLATORS [J].
GLANCE, BS ;
SCHNEIDER, MV .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1974, MT22 (12) :1281-1283
[6]   DESIGN CONSIDERATIONS FOR RESONANT TRAVELLING-WAVE IMPATT OSCILLATORS [J].
HAMBLETON, KG ;
ROBSON, PN .
INTERNATIONAL JOURNAL OF ELECTRONICS, 1973, 35 (02) :225-244
[7]   HIGH-FREQUENCY NEGATIVE-RESISTANCE CIRCUIT PRINCIPLES FOR ESAKI DIODE APPLICATIONS [J].
HINES, ME .
BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (03) :477-513
[8]  
MIDFORD TA, 1968, P IEEE, P1724
[9]  
SHIH HD, 1983, J VAC SCI TECHNOL, V20