ATOMIC-LAYER CHEMICAL-VAPOR-DEPOSITION OF SIO2 BY CYCLIC EXPOSURES OF CH3OSI(NCO)(3) AND H2O2

被引：26

作者：

MORISHITA, S ^{[1
]}

UCHIDA, Y ^{[1
]}

MATSUMURA, M ^{[1
]}

机构：

[1] NISHI TOKYO UNIV,DEPT ELECTR & INFORMAT SCI,UENOHARA,YAMANASHI 40901,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 10期

关键词：

SIO2; ATOMIC-LAYER CHEMICAL-VAPOR-DEPOSITION; CH3OSI(NCO)(3); H2O2;

D O I：

10.1143/JJAP.34.5738

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Atomic-layer chemical-vapor-deposition (AL-CVD) of SiO2 has been achieved by cyclic exposures of CH3OSi(NCO)(3) and H2O2 at room temperature. The deposition rate was saturated at about 2.0 Angstrom/cycle i.e., equal to the ideal quasi-monolayer/cycle. The surface roughness after 100 deposition cycles was found to be less than +/-10 Angstrom by atomic force microscopy (AFM). Film properties were also evaluated by auger electron spectroscopy (AES), X-ray photoemission spectroscopy (XPS), and Fourier transform IR (FT-IR) spectroscopy.

引用

页码：5738 / 5742

页数：5