OPTICAL AND ELECTRICAL CHARACTERIZATION OF ALXGA1-XSB CRYSTALS GROWN BY THE TRAVELING HEATER METHOD

被引：7

作者：

MEYER, BK

BISCHOPINK, G

BENZ, KW

SCHONER, A

PENSL, G

机构：

[1] UNIV FREIBURG,INST KRISTALLOG,W-7800 FREIBURG,GERMANY

[2] UNIV ERLANGEN NURNBERG,W-8520 ERLANGEN,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 128卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(93)90370-C

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Bulk AlxGa1-xSb single crystals with various AlSb solid compositions were grown by the travelling heater method (THM) on GaSb substrates. The crystals were grown with a Ga-rich as well as on an Sb-rich solution zone (undoped or doped with Te). We report in this investigation on results obtained by electrical characterization (DLTS, Hall effect) and optical spectroscopy (photoluminescence). Deep centres (DX centre) and shallow centres (GAMMA and X conduction band derived donors) were investigated.

引用

页码：475 / 478

页数：4

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