ON BARRIER HEIGHT INHOMOGENEITIES AT POLYCRYSTALLINE METAL-SEMICONDUCTOR CONTACTS

The possibility of barrier height fluctuations at the intimate metal semiconductor interface is discussed and a uniform barrier height distribution model suitable for polycrystalline gates with grain dimensions much larger than the Debye length is presented. The expressions for the I-V characteristics and the apparent barrier height are derived under the assumption of pure thermionic emission as a mode of carrier transport. To explore whether the barrier is homogeneous or not, I-V measurements at various temperatures are necessary.