CHEMISORPTION AND SCHOTTKY-BARRIER FORMATION OF GA ON SI(111) 7X7

被引：32

作者：

MARGARITONDO, G ^{[1
]}

CHRISTMAN, SB ^{[1
]}

ROWE, JE ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1976年 / 13卷 / 01期

关键词：

D O I：

10.1116/1.568839

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：329 / 332

页数：4

共 20 条

[1]

Appelbaum J.A., 1974, PHYSICS SEMICONDUCTO, P675

[2] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].

BARDEEN, J .

PHYSICAL REVIEW, 1947, 71 (10) :717-727

[3]

CROMWELL CR, 1974, J VAC SCI TECHNOL, V11, P951

[4] RELATION OF SCHOTTKY BARRIERS TO EMPTY SURFACE STATES ON 3-5 SEMICONDUCTORS [J].

EASTMAN, DE ;

FREEOUF, JL .

PHYSICAL REVIEW LETTERS, 1975, 34 (26) :1624-1627

[5] PHOTOEMISSION DENSITIES OF INTRINSIC SURFACE STATES FOR SI, GE, AND GAAS [J].

EASTMAN, DE ;

GROBMAN, WD .

PHYSICAL REVIEW LETTERS, 1972, 28 (21) :1378-&

[6] PHOTOEMISSION STUDIES OF GAAS-CS INTERFACE [J].

GREGORY, PE ;

SPICER, WE .

PHYSICAL REVIEW B, 1975, 12 (06) :2370-2381

[7] THEORY OF SURFACE STATES [J].

HEINE, V .

PHYSICAL REVIEW, 1965, 138 (6A) :1689-&

[8] MANY-BODY EFFECTS AT METAL-SEMICONDUCTOR JUNCTIONS .2. SELF ENERGY AND BAND-STRUCTURE DISTORTION [J].

INKSON, JC .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (08) :1350-1362

[9] SCHOTTKY BARRIERS AND PLASMONS [J].

INKSON, JC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06) :943-946

[10]

INKSON JC, 1972, J PHYS C, V5, P7599

← 1 2 →