EFFECT OF GROWTH TEMPERATURE ON THE ELECTRICAL-PROPERTIES OF CCL4-DOPED SEMIINSULATING INP

被引：7

作者：

GARDNER, NF ^{[1
]}

HARTMANN, QJ ^{[1
]}

BAKER, JE ^{[1
]}

STILLMAN, GE ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT ELECT & COMP ENGN,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 20期

关键词：

D O I：

10.1063/1.114933

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical properties of semi-insulating InP epitaxial layers grown by metalorganic chemical vapor deposition using CCl4 as a doping source have been studied as a function of the growth conditions of the material. Secondary ion mass spectrometry has been used to analyze the incorporation of impurity species in these layers. These measurements indicate that the resistivities of the CCl4-doped InP layers increase exponentially (exceeding 10(12)Omega cm) with increasing growth temperature. The incorporation of C, H, and Cl decreases in these layers. In conjunction with the dependence of the resistivity on the flow rate of the diluted CCl4 dopant during growth, these results suggest that the semi-insulating nature of the InP layers is due to CCl4-mediated incorporation of one or more defects during growth. It is not likely that either a deep level created by Cl or hydrogen passivation of shallow donors and accepters is responsible for the electrical properties of this material. (C) 1995 American Institute of Physics.

引用

页码：3004 / 3006

页数：3